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ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-30
-1.0
-1
-100
V
μ A
nA
V
I D =-250 μ A, V GS =0V
V DS =-24V, V GS =0V
V GS = ± 20V, V DS =0V
I D =-250 μ A, V DS =
V GS
Static Drain-Source On-State
Resistance (1)
R DS(on)
0.025 ?
0.035 ?
V GS =-10V, I D =-5.6A
V GS =-4.5V, I D =-2.8A
Forward Transconductance (1)(3)
g fs
14.4
S
V DS =-15V,I D =-5.6A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
1979
743
279
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
7.6
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
16.3
94.6
39.6
36
62.5
4.9
19.6
ns
ns
ns
nC
nC
nC
nC
V DD =-15V, I D =-5.6A
R G =6.2 ? , V GS =-10V
V DS =-15V,V GS =-5V
I D =-5.6A
V DS =-15V,V GS =-10V
I D =-5.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95 V
T j =25°C, I S =-5.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
35
39.9
ns
nC
T j =25°C, I F =-5.6A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JANUARY 2006
3
SEMICONDUCTORS
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